Datasheet4U Logo Datasheet4U.com

IXBT20N360HV - Monolithic Bipolar MOS Transistor

Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Datasheet preview – IXBT20N360HV

Datasheet Details

Part number IXBT20N360HV
Manufacturer IXYS (now Littelfuse)
File Size 287.68 KB
Description Monolithic Bipolar MOS Transistor
Datasheet download datasheet IXBT20N360HV Datasheet
Additional preview pages of the IXBT20N360HV datasheet.

📁 Similar Datasheet

  • IXBT10N170 - Bipolar MOS Transistor (IXYS Corporation)
  • IXBT16N170A - Bipolar MOS Transistor (IXYS Corporation)
  • IXBT42N170 - Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBT42N170A - Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBD4410 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBD4411 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBF9N140 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBF9N140 - Power MOSFET (IXYS Corporation)
  • IXBF9N160 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBF9N160 - Power MOSFET (IXYS Corporation)
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat)  3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 70 20 220 ICM = 160 VCES  1500 10 430 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 Mounting Torque (TO-247HV) 1.
Published: |