Datasheet4U Logo Datasheet4U.com

IXBT12N300 - Bipolar MOS Transistor

Features

  • High Blocking Voltage.
  • International Standard Packages.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Datasheet preview – IXBT12N300

📁 Similar Datasheet

  • IXBT10N170 - Bipolar MOS Transistor (IXYS Corporation)
  • IXBT16N170A - Bipolar MOS Transistor (IXYS Corporation)
  • IXBT42N170 - Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBT42N170A - Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBD4410 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBD4411 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBF9N140 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBF9N140 - Power MOSFET (IXYS Corporation)
  • IXBF9N160 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBF9N160 - Power MOSFET (IXYS Corporation)
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD M d Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 30 A 12 A 100 A VGE = 15V, TVJ = 125°C, RG = 30 ICM = 98 A Clamped Inductive Load 1500 V TC = 25°C 160 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Published: |