IXBT12N300
IXBT12N300 is Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBT12N300 IXBH12N300
VCES = IC110 = VCE(sat)
3000V 12A 3.2V
Symbol
VCES VCGR
VGES V
IC25 IC110 ICM
SSOA (RBSOA)
TJ TJM Tstg
TL TSOLD
M d
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient
± 20
± 30
TC = 25°C TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 30
ICM = 98
Clamped Inductive Load
TC = 25°C
-55 ... +150
°C
°C
-55 ... +150
°C
Maximum Lead Temperature for...
