IXBT12N300HV
IXBT12N300HV is Bipolar MOS Transistor manufactured by IXYS.
- Part of the IXBA12N300HV comparator family.
- Part of the IXBA12N300HV comparator family.
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBA12N300HV IXBT12N300HV
VCES = IC110 = VCE(sat)
3000V 12A 3.2V
Symbol
VCES VCGR
VGES VGEM
C25
C110
SSOA (RBSOA)
TJ TJM T stg
TSOLD
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C
T = 110°C C
TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load TC = 25°C
Plastic Body for 10s TO-263HV TO-268HV
Maximum Ratings
± 20
± 30
ICM = 98
-55 ... +150
°C
°C
-55 ... +150
°C
°C
2.5 g
4.0...
