IXBT12N300HV Description
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat) 3000V 12A 3.2V Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM T stg TSOLD Weight Test Conditions TJ.
IXBT12N300HV Key Features
- High Voltage Package
- High Blocking Voltage
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density