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IXBT14N300HV - Bipolar MOS Transistor

This page provides the datasheet information for the IXBT14N300HV, a member of the IXBA14N300HV Bipolar MOS Transistor family.

Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A Clamped Inductive Load 1500 V VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs TC = 25°C 200 W -55 ... +150 °C 150 °C -55 ...
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