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IXBT14N300HV Datasheet Bipolar MOS Transistor

Manufacturer: IXYS (now Littelfuse)

Download the IXBT14N300HV datasheet PDF. This datasheet also includes the IXBA14N300HV variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXBA14N300HV-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A Clamped Inductive Load 1500 V VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs TC = 25°C 200 W -55 ...

+150 °C 150 °C -55 ...

+150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247HV) 10..65 / 2.2..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-268HV TO-247HV 2.5 g 4.0 g 6.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250µA, VGE = 0V V GE(th) IC = 250µA, VCE = VGE I V = 0.8 • V , V = 0V CES CE CES GE IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 14A, VGE = 15V, Note 1 Characteristic Values Min.

Key Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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