IXBT14N300HV Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat) 3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight.
IXBT14N300HV Key Features
- High Voltage Packages
- High Blocking Voltage
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density