IXBT22N300HV Description
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT22N300HV IXBH22N300HV VCES = IC110 = VCE(sat) 3000V 22A 2.7V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC.
IXBT22N300HV Key Features
- High Voltage Packages
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density