IXBT20N300HV
IXBT20N300HV is Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
VCES = IC110 = VCE(sat)
3000V 20A 3.2V
Symbol
VCES VCGR VGES V
IC25 IC110 ICM SSOA (RBSOA)
PC TJ TJM Tstg T
SOLD
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C
Plastic Body for 10s
Maximum Ratings
± 20
± 30
ICM = 130
-55 ... +150
°C
°C
-55 ... +150
°C
°C
4 g
TO-268HV
G E C (Tab)
G = Gate E = Emiiter
C = Collector Tab = Collector
Features
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