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IXBT20N300HV - Bipolar MOS Transistor

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IXYS

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IXBT20N300HV Bipolar MOS Transistor by IXYS - Datasheet Preview — Datasheet preview – IXBT20N300HV

Datasheet Details

Part number	IXBT20N300HV
Manufacturer	IXYS
File Size	880.20 KB
Description	Bipolar MOS Transistor
Datasheet	IXBT20N300HV Datasheet
Additional preview pages of the IXBT20N300HV datasheet.

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Features

High Voltage Package.
High Blocking Voltage.
Anti-Parallel Diode.
Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V I GES VCE(sat) V = 0V, V = ± 20V CE GE I = 20A, V = 15V, Note 1 C GE Characteristic Values Min. Typ. Max. 3000 2.5 V 5.0 V TJ = 125°C 35 µA 1.5 mA ±100 nA 2.7 3.2 V T = 125°C 3.2 V J Advantages.
L.

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Published: Feb 17, 2025 |