IXBT20N300HV Description
+150 °C 260 °C 4 g TO-268HV G E C (Tab) G = Gate E = Emiiter C = Collector Tab = Collector.
IXBT20N300HV Key Features
- High Voltage Package
- High Blocking Voltage
- Anti-Parallel Diode
- Low Conduction Losses
- VCES, VGE = 0V
- Low Gate Drive Requirement
- High Power Density