* z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 250 2500 11..65/2.5..15 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitan
IXFC16N50P Datasheet (108.67 KB)
IXFC16N50P
IXYS
108.67 KB
Polarhv hiperfet power mosfet.
Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrins.
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