IXFH16N90 mosfets equivalent, hiperfet power mosfets.
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package i.
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ .
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