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IXFH16N90Q - Power MOSFET

Key Features

  • Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 900 VDS = VGS, ID = 4 mA 3.0 V GS = ±20 V, DC V DS = 0 VDS = VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5.
  • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 5.0 V ±200 nA 50 µA 2 mA 0.65 Ω z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classificat.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 I DM IAR E AR EAS dv/dt PD T J TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C T C = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Maximum Ratings 900 V 900 V ±20 V ±30 V 16 A 64 A 16 A 45 mJ 1.5 J 5 V/ns 360 W -55 ... +150 °C 150 °C -55 ...