IXFH16N90 Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 1.13/10 6 V V V V A A A mJ V/ns W °C °C °C °C Nm/lb.in. g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) G C (TAB).
IXFH16N90 Key Features
- easy to drive and to protect Fast intrinsic Rectifier