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IXFH50N30Q3 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFH50N30Q3 datasheet PDF. This datasheet also includes the IXFT50N30Q3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFT50N30Q3_IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 300 V 300 V  20 V  30 V 50 A 150 A 50 A 1.5 J 50 V/ns 690 W -55 ...

+150 150 -55 ...

+150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 6.0 Nm/lb.in.

Key Features

  • Low Intrinsic Gate Resistance.
  • International Standard Packages.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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