Download the IXFH96N15P datasheet PDF.
This datasheet also covers the IXFV96N15P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C
Characteristic Values Min. Typ. Max. 150 3.0 5.0 ±100 25 1000 24 V V nA µA µA mΩ
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
Full PDF Text Transcription for IXFH96N15P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFH96N15P. For precise diagrams, and layout, please refer to the original PDF.
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXFH 96N15P IXFV 96N15P IXFV 96N15PS VDSS ID25 trr RDS(on) =www.DataSheet4U.com 150 V = ...
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6N15P IXFV 96N15PS VDSS ID25 trr RDS(on) =www.DataSheet4U.com 150 V = 96 A = 24 mΩ < 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 96 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb TO-247 (IXFH) G D S (TAB) PLUS220 (IXFV) G
IXFH96N15P Datasheet
