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IXYS

IXFJ20N85X Datasheet Preview

IXFJ20N85X Datasheet

Power MOSFET

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X-Class HiPerFETTM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXFJ20N85X
D
G
S
VDSS =
ID25 =
RDS(on)
850V
9.5A
360m
ISO TO-247TM
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
850
V
850
V
30
V
40
V
9.5
A
50.0
A
10
A
800
mJ
50
V/ns
110
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
2500
V~
5
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 2.5mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 10A, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
             100 nA
25 A
1.5 mA
360 m
G
DS
Isolated Tab
G = Gate
D = Drain
S = Source
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2019 IXYS CORPORATION, All Rights Reserved
DS100772B(11/19)




IXYS

IXFJ20N85X Datasheet Preview

IXFJ20N85X Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 10A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
Effective Output Capacitance
Co(er)
Co(tr)
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 5(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 10A
Characteristic Values
Min. Typ. Max
6
10
S
0.8
1660
pF
1730
pF
24
pF
67
270
20
28
44
20
63
12
26
0.30
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.13 C/W
C/W
IXFJ20N85X
ISO TO-247 (IXFJ) OUTLINE
E
E2 / 2
Q
A
A2
R
0P
E2
D
1 23
U
S
T
4
L1
L
b2
b
c
b4
A1
e
W
PINS:
1 = Gate
2 = Drain
3 = Source
4 = Isolated
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 10A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
20 A
80 A
1.4 V
190
ns
1.6 μC
16.5
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXFJ20N85X
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXFJ20N85X Datasheet PDF





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