IXFJ13N50 Description
+150 V V V V A A A mJ V/ns W °C °C °C °C.
IXFJ13N50 Key Features
- Low profile, high power package
- Long creep and strike distances
- Easy up-grade path for TO-220 designs
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier