IXFJ13N50
IXFJ13N50 is Power MOSFET manufactured by IXYS.
Hi Per FETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFJ 13N50 VDSS
ID (cont) RDS(on) trr
= 500 = 13 = 0.4 £ 250
V A W ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 500 500 ±20 ±30 13 52 13 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A m J V/ns W °C °C °C °C g Features
- Low profile, high power package
- Long creep and strike distances
- Easy up-grade path for TO-220 designs
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier Applications
G = Gate, S = Source, D = Drain, TAB = Drain G D S
é
(TAB)
1.6 mm (0.062 in.) from case for 10 s
300 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.4 V V n A m A m A W
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