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IXFJ20N85X Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

X-Class HiPerFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXFJ20N85X D G S VDSS = ID25 =  RDS(on) 850V 9.5A 360m ISO TO-247TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 50/60 Hz, RM, t = 1min Maximum Ratings 850 V 850 V 30 V 40 V 9.5 A 50.0 A 10 A 800 mJ 50 V/ns 110 W -55 ...

+150 C 150 C -55 ...

+150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 2500 V~ 5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 2.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 10A, Note 1 Characteristic Values Min.

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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