IXFJ20N85X Description
850 V 3.5 5.5 V 100 nA 25 A 1.5 mA 360 m G DS Isolated Tab G = Gate D = Drain S = Source.
IXFJ20N85X Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Avalanche Rated
- Low RDS(ON) and QG
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings