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IXFJ36N30 - Power MOSFET

Features

  • G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB).
  • International standard package.
  • Low R HDMOS process.
  • Rugged polysilicon gate cell structure.
  • High commutating dv/dt rating.
  • Fast switching times TM DS (on) JEDEC TO-247 AD Mounting torque 1.13/10 Nm/lb. in. 5 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s.

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ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 ID25 = RDS(on) = V 36 A 70 mΩ trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 36 144 36 19 5 300 -55 ... +150 150 -55 ...
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