IXFJ36N30 Datasheet | IXYS

ADVANCE TECHNICAL INFORMATION Hi Per FETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 ID25 = RDS(on) = V 36 A 70 mΩ trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 36 144 36 19 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A m J V/ns W °C °C °C Features G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) - International standard package - Low R HDMOS process - Rugged polysilicon gate cell structure - High mutating dv/dt rating - Fast switching times TM DS (on) JEDEC TO-247 AD Mounting torque 1.13/10 Nm/lb.in. 5 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications - Switch-mode and resonant-mode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 25 250 V V n A µA µA Advantages VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 V - Motor controls - Uninterruptible Power Supplies (UPS) - DC choppers power...