IXFJ36N30 Overview
+150 V V V V A A A mJ V/ns W °C °C.
IXFJ36N30 Key Features
- International standard package
- Low R HDMOS process
- Rugged polysilicon gate cell structure
- High mutating dv/dt rating
- Fast switching times
IXFJ36N30 Datasheet Details
| Part number | IXFJ36N30 |
|---|---|
| Datasheet | IXFJ36N30_IXYS.pdf |
| File Size | 99.87 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | Power MOSFET |
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