IXFJ36N30 Description
+150 V V V V A A A mJ V/ns W °C °C.
IXFJ36N30 Key Features
- International standard package
- Low R HDMOS process
- Rugged polysilicon gate cell structure
- High mutating dv/dt rating
- Fast switching times
- Part: IXFJ36N30
- Manufacturer: IXYS
- Size: 99.87 KB
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