IXFJ40N30 Description
+150 V V V V A A A mJ V/ns W °C °C °C °C.
IXFJ40N30 Key Features
- Low profile, high power package
- Long creep and strike distances
- Easy up-grade path for TO-220
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- Fast intrinsic Rectifier
IXFJ40N30 Applications
- easy to drive and to protect rated designs