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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
IXFJ 40N30 VDSS = 300
ID25 = RDS(on) =
V 40 A 80 mW
trr < 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 300 300 ±20 ±30 40 160 40 30 5 300 -55 ... +150 150 -55 ...
IXFJ40N30 Datasheet
