IXFJ32N50Q Datasheet | IXYS

Hi Per FETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFJ 32N50Q VDSS ID(cont) RDS(on) trr = 500 = 32 = 0.15 < 250 V A W ns Maximum Ratings 500 500 ±20 ±30 32 128 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A J m J V/ns W °C °C °C °C Features - Low profile, high power package - Long creep and strike distances - Easy up-grade path for TO-220 designs - Low RDS (on) low Qg process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect - Fast intrinsic Rectifier Applications G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 100 1 0.15 V V n A m A m A W - - - - - - - -...