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IXFJ32N50Q Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFJ 32N50Q VDSS ID(cont) RDS(on) trr = 500 = 32 = 0.15 < 250 V A W ns Maximum Ratings 500 500 ±20 ±30 32 128 32 1.5 45 5 360 -55 ...

+150 150 -55 ...

Key Features

  • Low profile, high power package.
  • Long creep and strike distances.
  • Easy up-grade path for TO-220 designs.
  • Low RDS (on) low Qg process.
  • Rugged polysilicon gate cell structure.
  • Unclamped Inductive Switching (UIS) rated.
  • Low package inductance - easy to drive and to protect.
  • Fast intrinsic Rectifier.

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