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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFJ 32N50Q VDSS
ID(cont)
RDS(on) trr
= 500 = 32 = 0.15 < 250
V A W ns
Maximum Ratings 500 500 ±20 ±30 32 128 32 1.5 45 5 360 -55 ... +150 150 -55 ...
IXFJ32N50Q Datasheet
