IXFJ32N50Q Description
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 V V V V A A A J mJ V/ns W °C °C °C.
IXFJ32N50Q Key Features
- Low profile, high power package
- Long creep and strike distances
- Easy up-grade path for TO-220 designs
- Low RDS (on) low Qg process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier