* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220 designs
* Low RDS (on) low Qg process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inducta
IXFJ32N50Q Datasheet (119.97 KB)
IXFJ32N50Q
IXYS
119.97 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDG.
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