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IXFJ36N30 - Power MOSFET

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IXYS

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IXFJ36N30 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXFJ36N30

Datasheet Details

Part number	IXFJ36N30
Manufacturer	IXYS
File Size	99.87 KB
Description	Power MOSFET
Datasheet	IXFJ36N30 Datasheet
Additional preview pages of the IXFJ36N30 datasheet.

Product details

Features

G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB).
International standard package.
Low R HDMOS process.
Rugged polysilicon gate cell structure.
High commutating dv/dt rating.
Fast switching times TM DS (on) JEDEC TO-247 AD Mounting torque 1.13/10 Nm/lb. in. 5 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s.

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Published: Aug 20, 2013 |