IXFJ36N30 Key Features
- International standard package
- Low R HDMOS process
- Rugged polysilicon gate cell structure
- High mutating dv/dt rating
- Fast switching times
- Part: IXFJ36N30
- Manufacturer: IXYS (official site)
- Size: 99.87 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFJ32N50Q | Power MOSFET |
| IXFJ13N50 | Power MOSFET |
| IXFJ20N85X | Power MOSFET |
| IXFJ40N30 | Power MOSFET |
| IXFA12N65X2 | Power MOSFET |
IXFJ36N30 Description
+150 V V V V A A A mJ V/ns W °C °C.