IXFJ36N30 mosfet equivalent, power mosfet.
G = Gate, S = Source, D = Drain, TAB = Drain G D S
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(TAB)
* International standard package
* Low R HDMOS process
* Rugged polysilicon gate cell structure <.
* Switch-mode and resonant-mode
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified.
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