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IXFJ40N30 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) = V 40 A 80 mW trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 300 300 ±20 ±30 40 160 40 30 5 300 -55 ...

+150 150 -55 ...

Key Features

  • G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB).
  • Low profile, high power package.
  • Long creep and strike distances.
  • Easy up-grade path for TO-220.
  • Low RDS (on).

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