* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB)
* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inducti
IXFJ40N30 Datasheet (64.22 KB)
IXFJ40N30
IXYS
64.22 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) =.
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