* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Symbol VDSS V GS(t
IXFK120N20 Datasheet (132.47 KB)
IXFK120N20
IXYS
132.47 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 V= DSS ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns .
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