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PolarTM HiPerFETTM Power MOSFET
IXFH120N20P IXFK120N20P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
PD
dV/dt
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264
Maximum Ratings
200
V
200
V
± 20
V
± 30
V
120
A
75
A
300
A
60
A
2
J
714
W
10
V/ns
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
IXFK120N20P Datasheet
