IXFN520N075T2 Datasheet TrenchT2 GigaMOS HiperFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

IXFN520N075T2 trencht2 gigamos hiperfet power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFN520N075T2
Manufacturer	IXYS (now Littelfuse)
File Size	198.94 KB
Description	TrenchT2 GigaMOS HiperFET Power MOSFET
Datasheet	IXFN520N075T2 Datasheet

Overview

Preliminary Technical Information www.DataSheet4U.com TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 480A 1.9mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ±20 ±30 480 200 1500 200 3 940 -55 ...

+175 175 -55 ...

+175 V V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.in.

Key Features

z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z z Mounting Torque Terminal Connection Torque International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS.

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