IXFN50N80Q2 Description
HiPerFETTM Power MOSFET .. +150 2500 V V V V A A A mJ J V/ns W °C °C °C.
IXFN50N80Q2 Key Features
- Double metal process for low gate resistance -miniBLOC, with Aluminium nitride isolation -Unclamped Inductive Switching
- Fast intrinsic Rectifier