Overview: Preliminary Technical Information www.DataSheet4U.com TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 480A 1.9mΩ miniBLOC, SOT-227 E153432
S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ±20 ±30 480 200 1500 200 3 940 -55 ... +175 175 -55 ... +175 V V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
