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IXFN520N075T2 - TrenchT2 GigaMOS HiperFET Power MOSFET

Features

  • z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z z Mounting Torque Terminal Connection Torque International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS.

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Datasheet Details

Part number IXFN520N075T2
Manufacturer IXYS (now Littelfuse)
File Size 198.94 KB
Description TrenchT2 GigaMOS HiperFET Power MOSFET
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Preliminary Technical Information www.DataSheet4U.com TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 480A 1.9mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ±20 ±30 480 200 1500 200 3 940 -55 ... +175 175 -55 ... +175 V V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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