IXFN58N50 Description
IXFN 58N50 IXFN 61N50 Preliminary Data Sheet .. +150 V V V V A A A A W °C °C °C V~.
IXFN58N50 Key Features
- International standard package
- Isolation voltage 3000V (RMS)
- Low R DS (on) HDMOSTM processl
- Rugged polysilicon gate cell structure
- Low drain-to-case capacitance (<60 pF)
- reduced RFI
- Low package inductance (< 10 nH)
- easy to drive and to protect
- Aluminium Nitride Isolation
- increased current ratings