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IXFR36N60P - Power MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect G = Gate S = Source D = Drain G D S ISOPLUS247 (IXFR) E153432 50/60 Hz, RMS, 1 minute Mounting torque Isoplus247 1.13/10 Nm/lb. in. 5 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case fo.

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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C TM IXFR 36N60P VDSS ID25 RDS(on) t rr = 600 V = 20 A ≤ 200 mΩ ≤ 250 ns Maximum Ratings 600 600 ± 30 ± 40 20 80 36 50 1.5 20 208 -55 ... +150 150 -55 ...
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