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IXFR32N80Q3 - Power MOSFET

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • Low Intrinsic Gate Resistance.
  • 2500V~ Electrical Isolation.
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFR32N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Ratings 800 V 800 V 30 V 40 V 24 A 80 A 32 A 3 J 50 500 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, 1 Minute 300 °C 260 °C 2500 V Mounting Force 20..120/4.5..