IXFR36N60P Description
Advance Technical Information .. PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 2500 V V V V A A A mJ J V/ns W °C °C °C.
IXFR36N60P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS)
- easy to drive and to protect G = Gate S = Source D = Drain G D S ISOPLUS247 (IXFR) E153432