IXFR36N60P Overview
Advance Technical Information .. PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet Fig. 1. Output Characteristics @ 25ºC 36 32 28 VGS = 10V 7V 90 80 70 VG
IXFR36N60P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS)
- easy to drive and to protect G = Gate S = Source D = Drain G D S ISOPLUS247 (IXFR) E153432