Datasheet4U Logo Datasheet4U.com

IXFR36N60P - Power MOSFET

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect G = Gate S = Source D = Drain G D S ISOPLUS247 (IXFR) E153432 50/60 Hz, RMS, 1 minute Mounting torque Isoplus247 1.13/10 Nm/lb. in. 5 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case fo.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFR36N50P Polar MOSFETs IXYS Corporation
IXFR30N110P Polar Power MOSFET HiPerFET IXYS Corporation
IXFR30N50Q Power MOSFET IXYS Corporation
IXFR30N60P PolarHV HiPerFET Power MOSFET IXYS Corporation
IXFR32N50Q Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFR32N100Q3 Power MOSFET
IXFR32N80Q3 Power MOSFET
IXFR102N30P Polar HiPerFET Power MOSFET
IXFR120N25P PolarHT HiPerFET Power MOSFET
IXFR140N20P PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C TM IXFR 36N60P VDSS ID25 RDS(on) t rr = 600 V = 20 A ≤ 200 mΩ ≤ 250 ns Maximum Ratings 600 600 ± 30 ± 40 20 80 36 50 1.5 20 208 -55 ... +150 150 -55 ...