W °C °C °C °C °C N/lb V~ g g
z z
z
International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
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1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 seconds Mounting force 50/60 Hz, RMS, 1 minute TO-264 PLUS247
300 260 20..120/4.5..25 2500 10.
Full PDF Text Transcription for IXFR80N50P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFR80N50P. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(o...
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Mode Avalanche Rated Fast Intrinsic Diode IXFR 80N50P VDSS ID25 RDS(on) trr = 500 V = 42 A < 72 mΩ < 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 42 75 200 80 80 305 10 300 -55 ... +150 150 -55 ...
IXFR80N50P Datasheet
