* W °C °C °C °C °C N/lb V~ g g z z z International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to
IXFR80N50P Datasheet (129.19 KB)
IXFR80N50P
IXYS
129.19 KB
Power mosfet.
Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR .
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