IXFX140N25T Datasheet GigaMOS Power MOSFET

Manufacturer: IXYS (now Littelfuse)

IXFX140N25T gigamos power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFX140N25T
Manufacturer	IXYS (now Littelfuse)
File Size	162.34 KB
Description	GigaMOS Power MOSFET
Datasheet	IXFX140N25T Datasheet

Overview

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK140N25T IXFX140N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 140A 17mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C Maximum Ratings 250 250 ± 20 ± 30 140 380 40 3 960 20 -55 ...

+150 150 -55 ...

+150 V V V V A A A J W V/ns °C °C °C °C °C Nm/lb.in.

Key Features

z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density.

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