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HiPerFETTM Power MOSFETs
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 14N100 15N100 14N100 15N100 14N100 15N100
Maximum Ratings 1000 1000 ±20 ±30 14 15 56 60 14 15 45 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W °C °C °C °C Nm/lb.in.
IXFX14N100 Datasheet
