Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxi.
( Electrically Isolated Tab)
IXGF20N250
VCES = 2500V
IC25 = 23A VCE(sat) ≤ 3.1V
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VCES VCGR VGES VGEM IC25 IC90 .
High Voltage IGBT
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