IXGT25N250HV Datasheet (IXYS) - High Voltage IGBT

IXGT25N250HV Description

Advance Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGT25N250HV VCES = IC110 = VCE(sat) ≤ 2500V 25A 2.9V TO-268 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE= 20V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds

IXGT25N250HV Features

* High Blocking Voltage High Voltage Package Advantages High Power Density Easy to Mount Applications Capacitor Discharge Pulser Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100508(11/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC(ON) Cies Coes Cres IC = 50