* High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge Pulser circuits Advantages High
IXGT25N160 Datasheet (163.16 KB)
IXGT25N160
IXYS
163.16 KB
High voltage igbt.
High Voltage IGBT
For Capacitor Discharge Applications
Preliminary Data Sheet
IXGH 25N160 IXGT 25N160
VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V
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IXGT25N250 - High Voltage IGBT
(IXYS)
Preliminary Technical Information
High Voltage IGBT
For Capacitor Discharge Applications
IXGH25N250 IXGT25N250 IXGV25N250S
VCES = 2500 V
IC25 = 60.
IXGT25N250HV - High Voltage IGBT
(IXYS)
Advance Technical Information
High Voltage IGBT
For Capacitor Discharge Applications
IXGT25N250HV
VCES =
IC110 = VCE(sat) ≤
2500V 25A 2.9V
TO-268.
IXGT20N100 - IGBT
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IGBT
IXGH 20N100 IXGT 20N100
VCES IC25 VCE(sat) tfi(typ)
= 1000 V = 40 A = 3.0 V = 280 ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 IC.
IXGT20N120 - IGBT
(IXYS Corporation)
..
IGBT
Preliminary Data Sheet
IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol VCES V.
IXGT20N120B - High Voltage IGBT
(IXYS)
High Voltage IGBT
Preliminary Data Sheet
IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
Symbol VCES VCGR V.
IXGT20N140C3H1 - GenX3 1400V IGBTs
(IXYS)
Advance Technical Information
GenX3TM 1400V IGBTs w/ Diode
High-Speed PT IGBTs for 20 - 50 kHz Switching
IXGH20N140C3H1 IXGT20N140C3H1
VCES = IC100.
IXGT20N60B - HiPerFAST IGBT
(IXYS Corporation)
..
HiPerFASTTM IGBT
IXGH 20N60B IXGT 20N60B
VCES IC25 VCE(sat)typ tfi(typ)
= 600 V = 40 A = 1.7 V = 100 ns
Preliminary data shee.
IXGT20N60BD1 - HiPerFAST IGBT
(IXYS Corporation)
..
HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.7 100
V A V ns
Prel.
