IXGT25N160, IXGH25N160 Datasheet - IXYS

IXGT25N160 High Voltage IGBT

High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet IXGH 25N160 IXGT 25N160 VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20 V, 1 ms VGE = 15 V, TVJ = 125°C, RG = 20 Ω Clamped inductive load TC = 25°C Maximum Ratings 1600 1600 ± 20 ± 30 75 25 200 ICM = 100.

IXGT25N160 Features

* High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure International standard packages - JEDEC TO-268 and - JEDEC TO-247 AD Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge Pulser circuits Advantages High

IXGH25N160_IXYS.pdf