IXGT20N140C3H1 Datasheet - IXYS

IXGT20N140C3H1 GenX3 1400V IGBTs

Advance Technical Information GenX3TM 1400V IGBTs w/ Diode High-Speed PT IGBTs for 20 - 50 kHz Switching IXGH20N140C3H1 IXGT20N140C3H1 VCES = IC100 = VCE(sat) ≤ tfi(typ) = TO-247 (IXGH) 1400V 20A 5.0V 32ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TJ = 125°C, RG = 5Ω Clamped Inductive L.

IXGT20N140C3H1 Features

* z z z z z Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat

IXGT20N140C3H1_IXYS.pdf