IXGT28N120B - High Voltage IGBT
www.DataSheet4U.com High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 50 28 150 ICM = 120 @ 0.8 VCES 250 -55 +150 150 -55 +150 300 260 V V V
IXGT28N120B Features
* High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA , VGE = 0 V = 250 µA, V
