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IXGT28N60B

Ultra-low V Ce(sat) Igbt

IXGT28N60B Features

* International standard packages

* Low VCE(sat) - for minimum on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications

IXGT28N60B Datasheet (84.24 KB)

Preview of IXGT28N60B PDF

Datasheet Details

Part number:

IXGT28N60B

Manufacturer:

IXYS Corporation

File Size:

84.24 KB

Description:

Ultra-low v ce(sat) igbt.
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com V.

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IXGT28N60B Ultra-low Cesat Igbt IXYS Corporation

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