IXGT28N60B Datasheet - IXYS Corporation

IXGT28N60B Ultra-low V Ce(sat) Igbt

Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 +150 150 -5.

IXGT28N60B Features

* International standard packages

* Low VCE(sat) - for minimum on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications

IXGT28N60B Datasheet (84.24 KB)

IXGT28N60B Datasheet Preview — Preview of IXGT28N60B PDF

Datasheet Details

Part number:

IXGT28N60B

Manufacturer:

IXYS Corporation

File Size:

84.24 KB

Description:

Ultra-low v ce(sat) igbt.

📁 Related Datasheet

IXGT28N60BD1 Low VCE(sat) IGBT (IXYS Corporation)

IXGT28N120B High Voltage IGBT (IXYS Corporation)

IXGT28N120BD1 High Voltage IGBT (IXYS)

IXGT28N30 HiPerFAST IGBT (IXYS Corporation)

IXGT28N30A HiPerFAST IGBT (IXYS Corporation)

IXGT28N30B HiPerFAST IGBT (IXYS Corporation)

IXGT28N90B HIPERFAST IGBT (IXYS Corporation)

IXGT20N100 IGBT (IXYS)

IXGT20N120 IGBT (IXYS Corporation)

IXGT20N120B High Voltage IGBT (IXYS)

TAGS

IXGT28N60B Ultra-low Cesat Igbt IXYS Corporation

Image Gallery

IXGT28N60B Distributor