IXGT28N120BD1, IXGH28N120BD1 Datasheet - IXYS

IXGT28N120BD1 High Voltage IGBT

High Voltage IGBT w/ Diode IXGH28N120BD1 IXGT28N120BD1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1200V 50A 3.5V 170ns TO-247AD (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC100 IF90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Chip Capability ) TC = 100°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.).

IXGT28N120BD1 Features

* z International Standard Packages JEDEC TO-247AD & TO-268 z IGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers z MOS Gate Turn-On z Fast Recovery Expitaxial Diode (FRED) - Soft Recovery with Low IRM Advantages z Saves Space (Two Devices in One Package) z Easy

IXGH28N120BD1-IXYS.pdf