* z Optimized for Low Conduction and Switching Losses z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2009 IXYS CORPORATION, A
IXGT24N170AH1 Datasheet (219.98 KB)
IXGT24N170AH1
IXYS
219.98 KB
High voltage igbt.
High Voltage IGBTs w/Diode Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns .
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