IXGT20N60BD1, IXGH20N60BD1 Datasheet - IXYS Corporation

IXGT20N60BD1 - HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCE

IXGT20N60BD1 Features

* DataShee Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268

* International standard packages

* High frequency IGBT and antiparallel FRED in one package

* High curren

IXGH20N60BD1_IXYSCorporation.pdf