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IXGT25N250HV Datasheet - IXYS

IXGT25N250HV - High Voltage IGBT

Advance Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGT25N250HV VCES = IC110 = VCE(sat) ≤ 2500V 25A 2.9V TO-268 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE= 20V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds

IXGT25N250HV Features

* High Blocking Voltage High Voltage Package Advantages High Power Density Easy to Mount Applications Capacitor Discharge Pulser Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100508(11/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC(ON) Cies Coes Cres IC = 50

IXGT25N250HV-IXYS.pdf

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Datasheet Details

Part number:

IXGT25N250HV

Manufacturer:

IXYS

File Size:

196.94 KB

Description:

High voltage igbt.

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