* z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC11
IXGT2N250 Datasheet (184.81 KB)
IXGT2N250
IXYS
184.81 KB
High voltage igbt.
Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V .
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