* z Optimized for Low Conduction Losses z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z Capacitor Discharge z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current
IXGT32N120A3 Datasheet (203.32 KB)
IXGT32N120A3
IXYS
203.32 KB
Ultra-low vsat pt igbt.
GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol V.
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