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GenX3TM 1200V IGBTs w/ Diode
Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching
Advance Technical Information
IXGK55N120A3H1 IXGX55N120A3H1
VCES = IC110 = VCE(sat) ≤
1200V 55A 2.3V
TO-264 (IXGK)
Symbol
VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA)
PC
TJ TJM Tstg TL TSOLD
Md FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
1200
V
1200
V
±20
V
±30
V
TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load
TC = 25°C
125
A
55
A
120
A
400
A
ICM = 110
A
@ 0.8 • VCES
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
IXGX55N120A3H1 Datasheet
