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IXYS
IXYS

IXSH35N140A Datasheet Preview

IXSH35N140A Datasheet

High Voltage High speed IGBT

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IXSH35N140A pdf
High Voltage
High speed IGBT
Short Circuit SOA Capability
IXSH35N140A
VCES =
IC90
VCE(sat)
=
tfi(typ) =
1400V
35A
4.0V
200ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
(tSSCCSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TJ = 125°C, RG = 3Ω
Clamped Inductive Load
VRGEG
=
=
15V,
22Ω,
VnCoEn=R8e4p0eVti,tiTveJ =
125°C
TC = 25°C
Mounting Torque
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Maximum Ratings
1400
1400
±20
±30
70
35
140
V
V
V
V
A
A
A
ICM = 70
@VCE 960
10
A
V
μs
300
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 35A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
4.5 7.5 V
50 μA
2 mA
±100 nA
3.4 4.0 V
TO-247
G
CE
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z International Standard Package
JEDEC TO-247AD
z High Frequency IGBT with Guaranteed
Short Circuit SOA Capability
z Fast Fall Time for Switching Speeds
up to 20kHz
z 2nd Generation HDMOSTM Process
z Low VCE(SAT)
- for Minimum on-state Conduction
Losses
z MOS Gate turn-on
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC and DC Motor Drives
z Uninterrupted Power Supplies
z Welding
© 2011 IXYS CORPORATION, All Rights Reserved
DS92716K(03/11)



IXYS
IXYS

IXSH35N140A Datasheet Preview

IXSH35N140A Datasheet

High Voltage High speed IGBT

No Preview Available !

IXSH35N140A pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 35A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 35A, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 35A, VGE = 15V
VCE = 960V, RG = 3Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 35A, VGE = 15V
VCE = 960V, RG = 3Ω
Note 2
RthJC
RthCK
Characteristic Values
Min. Typ. Max.
16 23
S
3710
230
73
pF
pF
pF
120 nC
32 nC
50 nC
40 ns
60 ns
150 300 ns
200 450 ns
4.0 mJ
40 ns
65 ns
4.0 mJ
240 ns
400 ns
9.5 mJ
0.42 °C/W
0.21 °C/W
IXSH35N140A
TO-247 (IXSH) Outline
123
P
e
Terminals: 1 - Gate
3 - Emiiter
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Collector
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Rght to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXSH35N140A
Description High Voltage High speed IGBT
Maker IXYS
Total Page 5 Pages
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IXSH35N140A pdf
IXSH35N140A Datasheet PDF
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