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IXTA3N150HV Datasheet High Voltage Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage Power MOSFET IXTA3N150HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 1500 V 1500 V 30 V 40 V 3 A 9 A 3 A 250 mJ 5 V/ns 250 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 1500 V 2.5 5.0 V 100 nA 10 A 100 A 7.3  VDSS = ID25 = RDS(on)  1500V 3A 7.

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Key Features

  • High Voltage package.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Molding Epoxies meet UL 94 V-0 Flammability Classification.
  • High Blocking Voltage Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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