* z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS =
IXTB62N50L Datasheet (143.68 KB)
IXTB62N50L
IXYS
143.68 KB
Power mosfet.
LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 500V 62A .
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