Overview: Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A
≤RDS(on) 0.45 Ω Symbol
VDSS VDGR V
GS
VGSM ID25 IDM
IAR EAR EAS P
D
TJ TJM Tstg TL V
ISOL
Md
FC Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Maximum Ratings IXTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T
JM
TC = 25°C
TC = 25°C
TC = 25°C
T = 25°C C 30 30 70 70
30 30 80 80 2.0 2.0 800 800
-55 ... +150 150
-55 ... +150 AG A D S (TAB) A miniBLOC, SOT-227 B (IXTN) mJ E153432
S
J DG
W °C G
°C
S
°C S D S 1.6 mm (0.063 in) from case for 10 s 300 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Mounting torque Terminal connection torque -
- Mounting force 28..150 /6.4..30 PLUS264 SOT-227B - °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. - N/lb.
